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Ready to meet the memory growth cycle in 2021, all vendors are gearing up
According to foreign media reports, as the world’s three major memory factories will continue mass production of next-generation DDR5 DRAM in 2021, the memory market is expected to welcome the next growth cycle. This makes Samsung, SK Hynix, Micron and other three major memory companies Intensify technological development, in order to face market competition and grab market share.
According to a report by the Korean media "BusinessKorea", Samsung Electronics, the global leader in the memory industry, plans to officially launch DDR5 DRAM in the second half of 2021.
Compared with the current product DDR4 specifications, the transmission rate of DDR5 DRAM can be as high as 6400Mbps, which is twice that of DDR4 DRAM 3200Mbps. In addition, the operating voltage of DDR5 is 1.1V, which is 9% lower than the 1.2V of DDR4. Moreover, the maximum capacity of DDR5 is 64Gb, which is 4 times that of DDR4 products.
And because of its outstanding performance, even if the price of DDR5 products is slightly higher than that of DDR4, there is still room for memory manufacturers to benefit from the market demand of generations. This is also the main reason that the global memory industry is expected to welcome the new growth cycle.
The report emphasized that according to TrendForce's forecasts, the market share of DDR5 in the PC DRAM market will grow from less than 1% in 2020 to 10% in 2021, a full growth of more than 10 times. Especially in the server DRAM market, DDR5 products will increase their market share from 4% in 2020 to 15% in 2021.
According to a report by the Korean media "BusinessKorea", Samsung Electronics, the global leader in the memory industry, plans to officially launch DDR5 DRAM in the second half of 2021.
Compared with the current product DDR4 specifications, the transmission rate of DDR5 DRAM can be as high as 6400Mbps, which is twice that of DDR4 DRAM 3200Mbps. In addition, the operating voltage of DDR5 is 1.1V, which is 9% lower than the 1.2V of DDR4. Moreover, the maximum capacity of DDR5 is 64Gb, which is 4 times that of DDR4 products.
And because of its outstanding performance, even if the price of DDR5 products is slightly higher than that of DDR4, there is still room for memory manufacturers to benefit from the market demand of generations. This is also the main reason that the global memory industry is expected to welcome the new growth cycle.
The report emphasized that according to TrendForce's forecasts, the market share of DDR5 in the PC DRAM market will grow from less than 1% in 2020 to 10% in 2021, a full growth of more than 10 times. Especially in the server DRAM market, DDR5 products will increase their market share from 4% in 2020 to 15% in 2021.
Therefore, in the context of rapid market growth, the world's three largest memory manufacturers are preparing to seize business opportunities.
Among them, South Korea's SK Hynix has publicly announced DDR5 DRAM for the first time on October 6, 2020, while rival Samsung is expected to start mass production of the 4th generation 10nm-class DDR5 and LPDDR5 from 2021.
As for the US-based memory manufacturer Micron announced in early 2020 that it has begun to sample the latest DDR5 memory to customers, built with the third-generation 10 nanometer-level 1z nanometer process, with a performance increase of 85%.
In addition to DDR5 DRAM competition, memory manufacturers are also wrestling with each other in the development of NAND Flash flash memory.
Among them, Micron announced in November 2020 that it has begun mass production of the world's first 176-layer stacked NAND Flash flash memory. Micron pointed out that the new 176-layer stacked NAND Flash flash memory has improved read and write performance by more than 35%, and compared with its best-in-class competitors, its size has been reduced by 30%.
Following Micron, SK Hynix also announced on December 7, 2020 that it has completed the development of 176-layer stacked NAND Flash memory. SK Hynix emphasized that as the productivity of new products increases by more than 35%, the 176-layer stacked NAND Flash flash memory will increase its market price competitiveness.
In addition, Samsung plans to release the 7th generation V-NAND flash memory in 2021. In theory, the 7th generation V-NAND flash memory can reach up to 256-layer stacking capacity.
In October 2020, SK Hynix announced that it would acquire Intel’s NAND flash memory and storage business for US$9 billion, making SK Hynix’s market share in the global NAND Flash flash memory market expected to reach more than 20%.
Among them, South Korea's SK Hynix has publicly announced DDR5 DRAM for the first time on October 6, 2020, while rival Samsung is expected to start mass production of the 4th generation 10nm-class DDR5 and LPDDR5 from 2021.
As for the US-based memory manufacturer Micron announced in early 2020 that it has begun to sample the latest DDR5 memory to customers, built with the third-generation 10 nanometer-level 1z nanometer process, with a performance increase of 85%.
In addition to DDR5 DRAM competition, memory manufacturers are also wrestling with each other in the development of NAND Flash flash memory.
Among them, Micron announced in November 2020 that it has begun mass production of the world's first 176-layer stacked NAND Flash flash memory. Micron pointed out that the new 176-layer stacked NAND Flash flash memory has improved read and write performance by more than 35%, and compared with its best-in-class competitors, its size has been reduced by 30%.
Following Micron, SK Hynix also announced on December 7, 2020 that it has completed the development of 176-layer stacked NAND Flash memory. SK Hynix emphasized that as the productivity of new products increases by more than 35%, the 176-layer stacked NAND Flash flash memory will increase its market price competitiveness.
In addition, Samsung plans to release the 7th generation V-NAND flash memory in 2021. In theory, the 7th generation V-NAND flash memory can reach up to 256-layer stacking capacity.
In October 2020, SK Hynix announced that it would acquire Intel’s NAND flash memory and storage business for US$9 billion, making SK Hynix’s market share in the global NAND Flash flash memory market expected to reach more than 20%.
TrendForce said that as of the third quarter of 2020, Samsung Electronics ranked first in the global NAND Flash flash memory market with a market share of 33.1%, and Kioxia ranked second with 21.4%. Western Digital's market share It was 14.3%, ranking third, and SK Hynix and Intel's market share were 11.3% and 7.9%, respectively.
The report further emphasized that the industry expects that the NAND Flash flash memory market will grow faster than the DRAM market due to the development of smartphones to 5G and the demand for SSDs in data center servers, which makes the NAND Flash flash memory market It will grow at an annual rate of 30% to 35% by 2024. Compared with the average annual growth rate of DRAM, which is 15% to 20%, the NAND Flash flash memory market is growing at a much faster rate, which also makes manufacturers pay more attention to The development of the NAND Flash market.
The report further emphasized that the industry expects that the NAND Flash flash memory market will grow faster than the DRAM market due to the development of smartphones to 5G and the demand for SSDs in data center servers, which makes the NAND Flash flash memory market It will grow at an annual rate of 30% to 35% by 2024. Compared with the average annual growth rate of DRAM, which is 15% to 20%, the NAND Flash flash memory market is growing at a much faster rate, which also makes manufacturers pay more attention to The development of the NAND Flash market.